By Berk Kutay Gokmen
ISTANBUL (AA) - China has developed its first domestic tandem-type high-energy hydrogen ion implanter, achieving a breakthrough for self-reliance in semiconductor manufacturing, state-run China Daily reported on Sunday.
This development is expected to bring an end to the long-standing reliance on foreign technology in a key stage of the chip manufacturing process, the report said.
Developed by the China Institute of Atomic Energy under the China National Nuclear Corporation, “POWER-750H” marks a key advance in safeguarding China’s industrial supply chain from foreign tech blockades, according to the institute.
The ion implanter is regarded as one of the four core pieces of equipment in semiconductor manufacturing, together with photolithography systems, etching tools, and thin-film deposition equipment.
Although China has achieved progress in the other areas, high-energy ion implantation has long been a major constraint, with domestic producers historically depending almost exclusively on imported equipment.
The institute noted that the development of the POWER-750H demonstrates that China has achieved full-link research and development capability for tandem high-energy hydrogen ion implanters.